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  Datasheet File OCR Text:
 Low VF Chip Schottky Barrier Diodes
SUL32-AL
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2) 0.189(4.8) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.110(2.8) 0.094(2.4)
0.181(4.6) 0.165(4.2)
0.075(1.9) 0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 o C CONDITIONS Symbol IO I FSM MIN. TYP. MAX. 3.0 30 1.5 20 Rq JA CJ T STG -55 50 130 +150
o
UNIT A A mA mA C/w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
V R = V RRM T A = 100 o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE L32
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C) -55 to +125
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
(V) SUL32-AL 20
(V) 14
(V) 20
(V) 0.30
RATING AND CHARACTERISTIC CURVES (SUL32-AL)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2 3.0 2.4 1.8 1.2 0.6 0 0 20 40 60 80 100 120 140 160 180 200
Single Phase Half Wave 60Hz Resistive Or Inductive Load
10 3.0 1.0
Tj=25 C Pulse Width 300us 1% Duty Cycle
AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
100
0.1
.01
.1
.2
.3
.4
.5
.6
.7
.8
80
FORWARD VOLT AGE,(V)
60
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
40
20
FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100
0 1 5 10 50 100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
10
FIG.5-TYPICAL JUNCTION CAPACITANCE
Tj=75 C
700 600 500 400 300 200 100 0
1.0
.1
Tj=25 C
.01 0
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOL TAGE


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